Wide temperature range operation of DFB Lasers at 1310 and 1490nm

Author

Chen, T.R. ; Hsin, W. ; Chen, B. ; Chen, P. ; Erlig, H.

Author_Institution

Archcom Technol. Inc., Azusa, CA

fYear

2008

fDate

14-18 Sept. 2008

Firstpage

81

Lastpage

82

Abstract

This work reports the wide temperature range operation of 1310 and 1490 nm DFB lasers composed of InGaAsP/InP buried heterostructures. Ultrawide temperature range single mode operation has been demonstrated in 1310 nm DFB lasers covering -70deg to +110degC and 1490 nm lasers covering -45deg to +125degC. The lasers show other excellent performances such as high optical power, high modulation frequency, low noise, and high reliability.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; laser noise; laser reliability; optical modulation; semiconductor heterojunctions; semiconductor lasers; DFB lasers; InGaAsP-InP; buried heterostructures; laser noise; laser reliability; modulation frequency; optical power; single mode operation; temperature -45 degC to 125 degC; temperature -70 degC to 110 degC; wavelength 1310 nm; wavelength 1490 nm; Coatings; Fiber lasers; Holography; Laser modes; Optical films; Optical modulation; Passive optical networks; Power lasers; Tellurium; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International

Conference_Location

Sorrento

Print_ISBN

978-1-4244-1782-7

Electronic_ISBN

978-1-4244-1783-4

Type

conf

DOI

10.1109/ISLC.2008.4636019

Filename

4636019