Title :
Wide temperature range operation of DFB Lasers at 1310 and 1490nm
Author :
Chen, T.R. ; Hsin, W. ; Chen, B. ; Chen, P. ; Erlig, H.
Author_Institution :
Archcom Technol. Inc., Azusa, CA
Abstract :
This work reports the wide temperature range operation of 1310 and 1490 nm DFB lasers composed of InGaAsP/InP buried heterostructures. Ultrawide temperature range single mode operation has been demonstrated in 1310 nm DFB lasers covering -70deg to +110degC and 1490 nm lasers covering -45deg to +125degC. The lasers show other excellent performances such as high optical power, high modulation frequency, low noise, and high reliability.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; laser noise; laser reliability; optical modulation; semiconductor heterojunctions; semiconductor lasers; DFB lasers; InGaAsP-InP; buried heterostructures; laser noise; laser reliability; modulation frequency; optical power; single mode operation; temperature -45 degC to 125 degC; temperature -70 degC to 110 degC; wavelength 1310 nm; wavelength 1490 nm; Coatings; Fiber lasers; Holography; Laser modes; Optical films; Optical modulation; Passive optical networks; Power lasers; Tellurium; Temperature distribution;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636019
