DocumentCode :
2991556
Title :
Voltage controlled operation of a transistor vertical cavity surface emitting laser
Author :
Shi, Wei ; Chrostowski, Lukas ; Faraji, Behnam
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of British Columbia, Vancouver, BC
fYear :
2008
fDate :
14-18 Sept. 2008
Firstpage :
89
Lastpage :
90
Abstract :
A transistor VCSEL (TX-VCSEL) is numerically modeled. A new optical saturation effect is observed, which comes from the three-port operation. This enable the voltage control of the TX-VCSEL.
Keywords :
heterojunction bipolar transistors; optical saturation; semiconductor lasers; surface emitting lasers; voltage control; TX-VCSEL; optical saturation effect; three-port operation; transistor vertical cavity surface emitting laser; Heterojunction bipolar transistors; High speed optical techniques; Laser modes; Optical control; Optical saturation; Power generation; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
Type :
conf
DOI :
10.1109/ISLC.2008.4636023
Filename :
4636023
Link To Document :
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