• DocumentCode
    2991556
  • Title

    Voltage controlled operation of a transistor vertical cavity surface emitting laser

  • Author

    Shi, Wei ; Chrostowski, Lukas ; Faraji, Behnam

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of British Columbia, Vancouver, BC
  • fYear
    2008
  • fDate
    14-18 Sept. 2008
  • Firstpage
    89
  • Lastpage
    90
  • Abstract
    A transistor VCSEL (TX-VCSEL) is numerically modeled. A new optical saturation effect is observed, which comes from the three-port operation. This enable the voltage control of the TX-VCSEL.
  • Keywords
    heterojunction bipolar transistors; optical saturation; semiconductor lasers; surface emitting lasers; voltage control; TX-VCSEL; optical saturation effect; three-port operation; transistor vertical cavity surface emitting laser; Heterojunction bipolar transistors; High speed optical techniques; Laser modes; Optical control; Optical saturation; Power generation; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
  • Conference_Location
    Sorrento
  • Print_ISBN
    978-1-4244-1782-7
  • Electronic_ISBN
    978-1-4244-1783-4
  • Type

    conf

  • DOI
    10.1109/ISLC.2008.4636023
  • Filename
    4636023