Effect of N2 and O2 Anneal Gas Ratio For Low Resistance p - Type ZnO Formation

Author

Hamid, Haslinda A. ; Abdullah, Mat J. ; Aziz, Azlan A. ; Al-Hardan, N.H. ; Rosli, Siti A.

Author_Institution

Univ. Sains Malaysia, Penang

fYear

2006

fDate

Oct. 29 2006-Dec. 1 2006

Firstpage

498

Lastpage

501

Abstract

P - type conduction in ZnO thin films was realized by codoping method. ZnO thin films were prepared on silicon (111) substrates by DC magnetron sputtering using pure zinc disk as target and underwent heat treatment at 300degC for 1 hr. Results indicated that the co doped p - type ZnO had the lowest resistivity of 3.412 times 10^-3 Omega.cm with a carrier concentration of 1.54 times 10²² cm^-3.

Keywords

II-VI semiconductors; aluminium; annealing; carrier density; electrical conductivity; electrical resistivity; nitrogen; semiconductor doping; semiconductor thin films; wide band gap semiconductors; zinc compounds; DC magnetron sputtering; Si; ZnO:Al,N; annealing; carrier concentration; codoping; conduction; gas ratio; heat treatment; resistivity; resistivity 0.003412 ohmcm; silicon (111) substrates; temperature 300 degC; thin films; time 1 hr; Annealing; Conductivity; Grain size; Heat treatment; Nitrogen; Semiconductor thin films; Silicon; Sputtering; Substrates; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

0-7803-9730-4

Electronic_ISBN

0-7803-9731-2

Type

conf

DOI

10.1109/SMELEC.2006.381112

Filename

4266662