Electrical Properties of p-Type Al - N Codoped ZnO Thin Films

Author

Hamid, Haslinda Abdul ; Abdullah, Mat Johar ; Aziz, Azlan Abdul ; Rosli, Siti Azlina

Author_Institution

Univ. Sains Malaysia, Minden

fYear

2006

fDate

Oct. 29 2006-Dec. 1 2006

Firstpage

502

Lastpage

505

Abstract

Aluminium doped zinc thin films were deposited on silicon substrates using direct current (DC) magnetron sputtering in argon atmosphere. These films were then annealed in nitrogen-oxygen mixed gases for 1 hour at temperature range of 200degC to 500degC. P-type conduction of Al - N codoped ZnO thin films were obtained for all temperatures with a high hole concentration of 1.85 times 10²² cm^-3.

Keywords

II-VI semiconductors; aluminium; annealing; electrical conductivity; hole density; nitrogen; semiconductor doping; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; Si; ZnO:Al,N; annealing; codoped semiconductor thin films; direct current magnetron sputtering; electrical properties; hole concentration; nitrogen-oxygen mixed gases; p-type conduction; silicon substrates; temperature 200 degC to 500 degC; time 1 hour; Aluminum; Annealing; Argon; Atmosphere; Gases; Semiconductor thin films; Silicon; Sputtering; Transistors; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

0-7803-9730-4

Electronic_ISBN

0-7803-9731-2

Type

conf

DOI

10.1109/SMELEC.2006.381113

Filename

4266663