DocumentCode :
2991659
Title :
Multi-quantum well emission from blue InGaN-based laser
Author :
Schillgalies, M. ; Laubsch, A. ; Sabathil, M. ; Avramescu, Adrian ; Lutgen, S. ; Strauss, U.
fYear :
2008
fDate :
14-18 Sept. 2008
Firstpage :
95
Lastpage :
96
Abstract :
Electroluminescence measurements of color coded multi-quantum-well structures were used to improve the charge carrier distribution over three quantum wells with emission in the blue spectral region. Laser performance was improved by optimized quantum barrier design.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; laser beams; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; InGaN; blue InGaN-based laser; charge carrier distribution; color coded multiquantum well structure; electroluminescence; multiquantum well emission; quantum barrier design; Charge carrier density; Charge carriers; Current measurement; Electroluminescence; Indium; Pulse measurements; Quantum well devices; Quantum well lasers; Thermal resistance; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
Type :
conf
DOI :
10.1109/ISLC.2008.4636026
Filename :
4636026
Link To Document :
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