Title :
GaAs-based self-aligned laser incorporating an InGaP opto-electronic confinement layer
Author :
Groom, K.M. ; Stevens, B.J. ; Childs, D.T.D. ; Alexander, R.R. ; Roberts, J.S. ; Helmy, A.S. ; Hogg, R.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., Sheffield
Abstract :
We demonstrate a novel fabrication process for GaAs-based self-aligned lasers through regrowth upon an n-doped InGaP layer. Electrical and optical confinement results in high power single lateral mode emission from a ~ 980 nm DQW laser.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; quantum well lasers; semiconductor doping; semiconductor growth; DQW laser; GaAs; InGaP; InGaP opto-electronic confinement layer; self-aligned laser; single lateral mode emission; Carrier confinement; Contacts; Gallium arsenide; Laser modes; Optical device fabrication; Optical refraction; Optical variables control; Power lasers; Quantum well lasers; Temperature;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636027
