• DocumentCode
    2991717
  • Title

    Characterization of Si3N4 Metal-Insulator-Metal (MIM) Capacitors for Monolithic Microwave Integrated Circuits (MMIC) Applications

  • Author

    Guan, Lee Hock ; Osman, Mohd Nizam ; Dolah, Asban ; Rahim, Ahmad Ismat Abdul ; Yahya, Mohamed Razman ; Mat, Abdul Fatah Awang

  • Author_Institution
    UPM-MTDC, Serdang
  • fYear
    2006
  • fDate
    Oct. 29 2006-Dec. 1 2006
  • Firstpage
    515
  • Lastpage
    519
  • Abstract
    The fabrication of the MIM capacitors is illustrated in the paper. The effective capacitor areas are designed at 60 times 60, 240 times 240 and 380 times 380 mum2. From the s- parameter measurements, the fabricated capacitors showed capacitive capability up to frequency of 40 GHz. Strong parasitic effect was observed at low frequency while attenuation effect was observed at high frequency.
  • Keywords
    MIM devices; MMIC; silicon compounds; Si3N4; fabricated capacitors; metal-insulator-metal capacitors; monolithic microwave integrated circuits; Application specific integrated circuits; Attenuation; Fabrication; Frequency measurement; Integrated circuit measurements; MIM capacitors; MMICs; Metal-insulator structures; Microwave integrated circuits; Monolithic integrated circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    0-7803-9730-4
  • Electronic_ISBN
    0-7803-9731-2
  • Type

    conf

  • DOI
    10.1109/SMELEC.2006.380683
  • Filename
    4266666
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2991717