Title :
High-wall plug efficiency broad area laser bar with strain-compensated quantum well
Author :
Michel, N. ; Lecomte, M. ; Parillaud, O. ; Calligaro, M. ; Krakowski, M. ; Westphalen, T. ; Traub, M.
Author_Institution :
Alcatel Thales III-V Lab., Palaiseau
Abstract :
based on an Al-free active region with a strain compensated quantum well, we have obtained improved internal parameters, and a high wall-plug efficiency of 68% on a broad area laser bar.
Keywords :
laser beams; quantum well lasers; efficiency 68 percent; high-wall plug efficiency broad area laser bar; internal parameters; strain-compensated quantum well; Bars; Capacitive sensors; Chemical lasers; Current density; Doping profiles; Europe; III-V semiconductor materials; Plugs; Power lasers; Quantum well lasers; 975 nm; Al-free; Broad Area Laser Bar; High-power; Strain Compensated Quantum Well;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636030
