DocumentCode
2991754
Title
Titanium doped cryogenic sapphire resonator oscillators
Author
Kersale, Yann ; Boubekeur, N. ; Hartnett, J.G. ; Tobar, M.E. ; Bazin, N. ; Giordano, V.
Author_Institution
Dept. LPMO, Univ. de Franche, Besancon
fYear
2005
fDate
29-31 Aug. 2005
Firstpage
368
Lastpage
372
Abstract
Residual paramagnetic impurities are present in high quality sapphire crystal. This phenomenon was exploited as paramagnetic spin compensation at liquid helium temperature to build high Q cryogenic sapphire resonator oscillators (CSRO). In this paper we present the characterization of intentionally Ti3+ and Ti4+ doped sapphire resonator oscillators. For the Ti3+ resonator we used the 12.7 GHz mode operating at 34K. This resonator exhibited a frequency stability of order 2 times 10-3 for 8s < tau < 20s with the use of a Gifford-McMahon cryocooler as a cold source. This corresponds to state-of-the-art line splitting of the order of 10 -7. A second experiment with a pulse tube cryocooler shows an improvement in the short term frequency stability. The Ti4+ resonator oscillator at 13.8 GHz exhibited a frequency stability of 7 times 10-14 at tau = 16s
Keywords
cryogenic electronics; crystal oscillators; frequency stability; microwave oscillators; sapphire; titanium; 12.7 GHz; 13.8 GHz; 34 K; Al2O3; CSRO; Gifford-McMahon cryocooler; Ti; cryogenic sapphire resonator oscillators; frequency stability; pulse tube cryocooler; Australia; Cryogenics; Frequency; Impurities; Oscillators; Paramagnetic materials; Stability; Temperature distribution; Temperature sensors; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Frequency Control Symposium and Exposition, 2005. Proceedings of the 2005 IEEE International
Conference_Location
Vancouver, BC
Print_ISBN
0-7803-9053-9
Type
conf
DOI
10.1109/FREQ.2005.1573960
Filename
1573960
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