• DocumentCode
    2991757
  • Title

    High power, low threshold 1060-nm InGaAs/AlGaAs quantum dot lasers

  • Author

    Pavelescu, E.-M. ; Gilfert, C. ; Reithmaier, J.P. ; Martín-Mínguez, A. ; Esquivias, I.

  • Author_Institution
    Inst. of Nanostrcture Technol.&Analytics (INA), Univ. of Kassel, Kassel
  • fYear
    2008
  • fDate
    14-18 Sept. 2008
  • Firstpage
    105
  • Lastpage
    106
  • Abstract
    1060-nm InGaAs/(Al)GaAs quantum-dot laser material was developed with optimized dot geometry to allow high output powers of more than 4.5 W for a broad area laser in pulsed operation and a low transparency current density of 83 A/cm2.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser beams; quantum dot lasers; semiconductor quantum dots; transparency; InGaAs-AlGaAs; broad area laser; high power low threshold 1060-nm laser; low transparency current density; pulsed laser operation; quantum dot laser; wavelength 1060 nm; Indium gallium arsenide; Optical harmonic generation; Optical materials; Optical superlattices; Power generation; Power lasers; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
  • Conference_Location
    Sorrento
  • Print_ISBN
    978-1-4244-1782-7
  • Electronic_ISBN
    978-1-4244-1783-4
  • Type

    conf

  • DOI
    10.1109/ISLC.2008.4636031
  • Filename
    4636031
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2991757