• DocumentCode
    2991776
  • Title

    Studies on Failure Mechanism of Al Fluoride Oxide-AlxOyFz on Microchip Al Bondpads

  • Author

    Younan, Hua ; Siping, Zhao ; Ramesh, Rao ; Kun, Li

  • Author_Institution
    Chartered Semicond. Manuf. Ltd., Singapore
  • fYear
    2006
  • fDate
    Oct. 29 2006-Dec. 1 2006
  • Firstpage
    528
  • Lastpage
    532
  • Abstract
    Al fluoride oxide on microchip Al bondpads may cause non-stick on pad (NSOP) problem during bonding process. In this study, a failure mechanism to form Al fluoride oxide-AlxOyFz has been proposed. Based on the failure mechanism, F contamination on Al bondpads, it will chemically react with Al and 3 form Al-F complex compound, such as [AlF6]3-. [AlF6]3- formed may become an anode and further chemical reaction from O2 and moisture (H2O) will occur at the cathode and form the new product, OH-ions, which will undergo chemical reaction with Al to form Al(OH)3, and then become Al2O3. Finally, Al-F complex compound may further chemically react with Al2O3 to form Al fluoride oxide- AlxOyFz.
  • Keywords
    aluminium; failure analysis; surface contamination; wafer bonding; AlOF; bonding process; chemical reaction; failure mechanism; microchip bondpads; non-stick on pad problem; surface contamination; Chemical compounds; Chemical products; Contamination; Fabrication; Failure analysis; Inspection; Scanning electron microscopy; Spectroscopy; Surface morphology; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    0-7803-9730-4
  • Electronic_ISBN
    0-7803-9731-2
  • Type

    conf

  • DOI
    10.1109/SMELEC.2006.380686
  • Filename
    4266669