DocumentCode :
2991811
Title :
Studies on A Sample Preparation Method for HR-SEM and Application in Failure Analysis of Trench TEOS Gauging Measurement in Wafer Fabrication
Author :
Siping, Zhao ; Younan, Hua ; Zhiqiang, Mo ; Ying, Cho Jie
Author_Institution :
Chartered Semicond. Mfg Ltd, Singapore
fYear :
2006
fDate :
Oct. 29 2006-Dec. 1 2006
Firstpage :
533
Lastpage :
536
Abstract :
To identify nitride from oxide layer on the trench, it is necessary to perform BOE chemical staining. However, chemical staining using BOE will damage the oxide layer, causing inaccurate readings in the oxide gauging measurement in the trench. Moreover, damage on the oxide layer caused heavy charging at the side of the trench and the surface of oxide layer. In this paper, we proposed to coat a Cr layer over the trench before chemical staining. The damage problem was eliminated and the measurement of oxide gauging was more accurate. A application case is discussed for trench TEOS gauging measurement.
Keywords :
failure analysis; integrated circuit measurement; integrated circuit testing; surface treatment; chemical staining; failure analysis; trench TEOS gauging measurement; wafer fabrication; Chemical industry; Chemical technology; Chromium; Coatings; Etching; Fabrication; Failure analysis; Passivation; Performance evaluation; Protection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
Type :
conf
DOI :
10.1109/SMELEC.2006.380687
Filename :
4266670
Link To Document :
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