Quantum-dot Fabry-Perot laser-diode with a 4-THz injection-seeding bandwidth for 1-μm optical-waveband WDM systems

Author

Yamamoto, Naokatsu ; Sotobayashi, Hideyuki ; Akahane, Kouichi ; Tsuchiya, Masahiro

Author_Institution

Nat. Inst. of Inf. & Commun. Technol., Koganei

fYear

2008

fDate

14-18 Sept. 2008

Firstpage

113

Lastpage

114

Abstract

A 4-THz injection-seeding bandwidth (1042 -1057 nm) was successfully demonstrated with a 1-mum optical-waveband quantum-dot (QD) Fabry-Perot laser-diode. A Sb-molecule-sprayed InGaAs/GaAs QD structure in its active-medium was grown by molecular-beam-epitaxy with a GaAs-substrate.

Keywords

Fabry-Perot resonators; III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; molecular beam epitaxial growth; quantum dot lasers; semiconductor growth; semiconductor quantum dots; wavelength division multiplexing; GaAs; InGaAs-GaAs; QD structure; bandwidth 4 THz; injection locking; injection-seeding bandwidth; molecular-beam-epitaxy; optical-waveband WDM system; quantum-dot Fabry-Perot laser-diode; wavelength 1 mum; wavelength 1042 nm to 1057 nm; Bandwidth; Fabry-Perot; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Optical filters; Power generation; Quantum dots; Stimulated emission; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International

Conference_Location

Sorrento

Print_ISBN

978-1-4244-1782-7

Electronic_ISBN

978-1-4244-1783-4

Type

conf

DOI

10.1109/ISLC.2008.4636035

Filename

4636035