Title :
Highly stacked quantum dot laser fabricated using a strain compensation technique
Author :
Akahane, Kouichi ; Yamamoto, Naokatsu ; Tsuchiya, Masahiro
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Koganei
Abstract :
We fabricated laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique, which showed laser emission at 1.58 mum above the threshold current of 162 mA in pulsed mode.
Keywords :
III-V semiconductors; indium compounds; laser beams; laser modes; optical fabrication; quantum dot lasers; semiconductor quantum dots; InAs; InAs quantum dots; current 162 mA; laser diode fabrication; laser emission; stacked quantum dot laser; strain compensation technique; threshold current; wavelength 1.58 mum; Capacitive sensors; Electrodes; Indium phosphide; Laser modes; Lattices; Quantum dot lasers; Semiconductor lasers; Substrates; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636036
