DocumentCode
2991875
Title
The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers
Author
Crowley, M.T. ; Marko, I.P. ; Masse, N.F. ; Andreev, A.D. ; Sweeney, S.J. ; Reilly, E. P O ; Adams, A.R.
Author_Institution
Photonics Theor. Group, Tyndall Nat. Inst., Lee Maltings
fYear
2008
fDate
14-18 Sept. 2008
Firstpage
117
Lastpage
118
Abstract
The optical matrix element for excited-states is significantly weaker than the ground-state leading to thermally stable radiative recombination. This is not so for non-radiative Auger recombination, causing a sharp increase in threshold current with temperature.
Keywords
Auger effect; III-V semiconductors; electron-hole recombination; excited states; gallium arsenide; indium compounds; quantum dot lasers; semiconductor quantum dots; 1.3 mum quantum dot laser; InAs-GaAs; excited states; nonradiative Auger recombination; optical matrix element; threshold current; wavelength 1.3 mum; Gallium arsenide; Land surface temperature; Laser excitation; Quantum dot lasers; Radiative recombination; Spontaneous emission; Stationary state; Temperature distribution; Temperature sensors; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location
Sorrento
Print_ISBN
978-1-4244-1782-7
Electronic_ISBN
978-1-4244-1783-4
Type
conf
DOI
10.1109/ISLC.2008.4636037
Filename
4636037
Link To Document