Title :
High-Rate distribution of polarization entanglement at telecommunication wavelength using sinusoidally gated InGaAs/InP avalanche photodiodes
Author :
Inoue, Shuichiro
Author_Institution :
Inst. of Quantum Sci., Nihon Univ., Tokyo, Japan
Abstract :
We describe the application of high-speed, high-efficiency single-photon detectors using sinusoidally gated InGaAs/InP APDs to the polarization entanglement distribution at 1550 nm. A distribution rate of 0.4 kHz was obtained over 5.3-dB channel loss.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; polarisation; quantum entanglement; InGaAs-InP; frequency 0.4 kHz; high-rate distribution; loss 5.3 dB; polarization entanglement; single-photon detectors; sinusoidally gated avalanche photodiodes; telecommunication wavelength; Indium gallium arsenide; Optical fiber amplifiers; Optical fiber communication; Optical fiber devices; Optical fiber polarization; Photonics;
Conference_Titel :
Photonics Society Summer Topical Meeting Series, 2011 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4244-5730-4
DOI :
10.1109/PHOSST.2011.6000025
