Title :
I/O Process Optimization to Cover Wide Range Operation Voltage
Author :
Pal, Deb Kumar ; Sabri, Kenny ; Kee, Margaret Ting Leh ; Yeong, Son Jin ; Suck, Park Hyun
Author_Institution :
X-FAB Sarawak Sdn. Bhd., Kuching
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
A process has been developed to cover wide range I/O operation voltage (1.8V to 3.3V) without changing the 3.3V I/O library at author´s organization to meet the market demand by optimization of 3.3V process. The main emphasis is given on to improve the Idsat current from the baseline and maintain the Ioff comparable as 3.3V process. This process passed all device level reliability test. This process is used to fabricate wide range I/O operation voltage device at author´s organization.
Keywords :
integrated circuit reliability; semiconductor process modelling; I/O operation voltage device; I/O process optimization; range operation voltage; voltage 1.8 V to 3.3 V; Batteries; Circuit testing; Costs; Design optimization; Implants; Libraries; MOS devices; Maintenance; Silicon; Voltage;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.380701
