Low phase noise VCSO with diamond SAW resonators

Author

Fujii, Satoshi ; Takada, Yutaka ; Harima, Hiroshi

Author_Institution

Adv. Technol. Dev. Center, Seiko Epson Corp., Nagano

fYear

2005

fDate

29-31 Aug. 2005

Firstpage

499

Lastpage

502

Abstract

L and S-band VCSOs with diamond SAW resonators have been developed based on Lesson´s model. First, the crystallinity of diamond thin film required for high-frequency SAW resonators was characterized by Raman scattering and electron backscattering diffraction. From these measurements, it was found that the propagation loss of SAW was lowered in relatively degraded films having small crystallites, and preferential grain orientation. After optimizing CVD growth conditions, a 3.4 GHz diamond SAW resonator with low insertion loss and high Q-value has been successfully developed. Second, by using the diamond SAW resonators, and employing low temperature co-fired ceramics, L and S-band VCSOs with a low phase noise were successfully obtained

Keywords

Raman spectra; UHF oscillators; diamond; electron backscattering; microwave oscillators; surface acoustic wave oscillators; surface acoustic wave resonators; voltage-controlled oscillators; 3 GHz; CVD growth conditions; L band VCSO; Lesson model; Raman scattering; S-band VCSO; crystallinity; diamond SAW resonators; diamond thin film; electron backscattering diffraction; high Q-value; high-frequency SAW resonators; low phase noise VCSO; low temperature co-fired ceramics; Backscatter; Crystallization; Diffraction; Electrons; Loss measurement; Phase noise; Propagation losses; Raman scattering; Surface acoustic waves; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium and Exposition, 2005. Proceedings of the 2005 IEEE International

Conference_Location

Vancouver, BC

Print_ISBN

0-7803-9053-9

Type

conf

DOI

10.1109/FREQ.2005.1573981

Filename

1573981