DocumentCode
2992377
Title
Power MOSFET macromodel accounting for temperature dependence: parameter extraction and simulation
Author
Leonardi, C. ; Frisina, F. ; Letor, R. ; Raciti, A.
Author_Institution
STMicroelectron., Catania, Italy
fYear
1998
fDate
1998
Firstpage
37
Lastpage
47
Abstract
A new PSpice model of power MOSFETs has been developed aiming to account for the parameter variations with the temperature. A new computer aided design package that helps the designer in the parameter extraction procedure is discussed in detail. The model accuracy has been tested by comparison of the simulated waveforms with the experimental traces relative to actual devices
Keywords
SPICE; electronic design automation; power MOSFET; semiconductor device models; computer aided design package; parameter extraction; parameter extraction procedure; power MOSFET macromodel; simulated waveforms; simulation; temperature dependence; Circuit simulation; Circuit testing; Computational modeling; MOSFET circuits; Parameter extraction; Parasitic capacitance; Power MOSFET; Power system modeling; Temperature dependence; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computers in Power Electronics, 1998. 6th Workshop on
Conference_Location
Cernobbio
ISSN
1093-5142
Print_ISBN
0-7803-4856-7
Type
conf
DOI
10.1109/CIPE.1998.779656
Filename
779656
Link To Document