Uncooled SiC MWIR detector based on optical signal

Author

Lim, Geunsik ; Manzur, Tariq ; Kar, Aravinda

Author_Institution

Dept. of Mech., Mater. & Aerosp. Eng., Univ. of Central Florida, Orlando, FL, USA

fYear

2011

fDate

18-20 July 2011

Firstpage

68

Lastpage

68

Abstract

Crystalline SiC has been doped with a p-type dopant using a laser doping technique to create an intermediate energy level within the bandgap of SiC. The energy gap between this acceptor level and the valence band of SiC is designed to match the midwave infrared (MWIR) wavelength (3-5 μm) of the photons that need to be detected. Although this study presents results pertaining to MWIR detection, the approach to creating intermediate energy levels can be utilized to fabricate crystalline semiconductor-based broadband detectors and emitters in the MWIR range.

Keywords

energy gap; impurity states; infrared detectors; semiconductor doping; silicon compounds; valence bands; wide band gap semiconductors; SiC; acceptor level; bandgap; broadband detectors; broadband emitters; crystalline SiC; crystalline semiconductor; intermediate energy level; laser doping; optical signal; p-type dopant; uncooled SiC MWIR detector; valence band; wavelength 3 mum to 5 mum; Detectors; Energy states; Optical detectors; Optical device fabrication; Optical reflection; Optical variables control; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Society Summer Topical Meeting Series, 2011 IEEE

Conference_Location

Montreal, QC

ISSN

Pending

Print_ISBN

978-1-4244-5730-4

Type

conf

DOI

10.1109/PHOSST.2011.6000048

Filename

6000048