Title :
Extended near-infrared wavelength VCSELs for optical sensing
Author :
Ortsiefer, M. ; Rosskopf, J. ; Rönneberg, E. ; Xu, Y. ; Maisberger, K. ; Shau, R. ; Neumeyr, C. ; Hofmann, W. ; Böhm, G. ; Hangauer, A. ; Chen, J. ; Strzoda, R. ; Amann, M.-C.
Author_Institution :
VERTILAS GmbH, Garching
Abstract :
This paper presents recent progress on InP-based long-wavelength buried tunnel junction-vertical cavity surface emitting lasers (BTJ-VCSELs) with wavelengths significantly beyond the communication range. This spectral region comprises strong absorption lines of several important species such as H2O (1877 nm), CO2 (2004 nm) or CO (2339 nm).
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; optical sensors; semiconductor lasers; surface emitting lasers; InGaAs-InAlAs; InP; absorption lines; buried tunnel junction; extended near-infrared wavelength VCSELs; long-wavelength BTJ-VCSELs; optical sensing; vertical-cavity surface-emitting lasers; Diode lasers; Indium gallium arsenide; Mirrors; Monitoring; Optical sensors; Optical surface waves; Temperature dependence; Temperature sensors; Tensile strain; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
DOI :
10.1109/ISLC.2008.4636062
