Extended near-infrared wavelength VCSELs for optical sensing

Author

Ortsiefer, M. ; Rosskopf, J. ; Rönneberg, E. ; Xu, Y. ; Maisberger, K. ; Shau, R. ; Neumeyr, C. ; Hofmann, W. ; Böhm, G. ; Hangauer, A. ; Chen, J. ; Strzoda, R. ; Amann, M.-C.

Author_Institution

VERTILAS GmbH, Garching

fYear

2008

fDate

14-18 Sept. 2008

Firstpage

167

Lastpage

168

Abstract

This paper presents recent progress on InP-based long-wavelength buried tunnel junction-vertical cavity surface emitting lasers (BTJ-VCSELs) with wavelengths significantly beyond the communication range. This spectral region comprises strong absorption lines of several important species such as H₂O (1877 nm), CO₂ (2004 nm) or CO (2339 nm).

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; optical sensors; semiconductor lasers; surface emitting lasers; InGaAs-InAlAs; InP; absorption lines; buried tunnel junction; extended near-infrared wavelength VCSELs; long-wavelength BTJ-VCSELs; optical sensing; vertical-cavity surface-emitting lasers; Diode lasers; Indium gallium arsenide; Mirrors; Monitoring; Optical sensors; Optical surface waves; Temperature dependence; Temperature sensors; Tensile strain; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International

Conference_Location

Sorrento

Print_ISBN

978-1-4244-1782-7

Electronic_ISBN

978-1-4244-1783-4

Type

conf

DOI

10.1109/ISLC.2008.4636062

Filename

4636062