Title :
Integrated LC VCO Compatible with Memory Process for Gigahertz Clock Generation
Author :
Choi, Minseok ; Jung, Youngho ; Yoon, Yeo Jo ; Kim, Young-Wug ; Shin, Hyungcheol
Author_Institution :
Seoul Nat. Univ., Seoul
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
This work presents the design and fabrication of the LC voltage-controlled oscillator (VCO) using 1-poly 3-metal CMOS process aimed for use in current memory manufacturing process. Poor characteristics of highly-resistive and immune to substrate-coupling metal-3 inductor in LC resonator were overcome by dual metal structure and patterned-ground shield (PGS) strategy. Fabricated VCO operated from 2.48 GHz to 2.73 GHz tuned by accumulation-mode MOS varactor. The corresponding tuning range was 250 MHz. The measured phase noise was - 113.5 dBc/Hz at 1 MHz offset at 2.48 GHz carrier frequency. The current consumption and corresponding power consumption were about 1.04 mA and 1.87 mW respectively.
Keywords :
CMOS integrated circuits; clocks; memory architecture; network synthesis; oscillators; power consumption; voltage control; 1-poly 3-metal CMOS process; LC resonator; LC voltage-controlled oscillator design; LC voltage-controlled oscillator fabrication; accumulation-mode MOS varactor; carrier frequency; dual metal structure; fabricated VCO; gigahertz clock generation; integrated LC VCO compatible; memory manufacturing; memory process; patterned-ground shield; power consumption; substrate-coupling metal-3 inductor; CMOS process; Clocks; Fabrication; Frequency measurement; Inductors; Manufacturing processes; Noise measurement; Tuning; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.380718
