Title :
Fabrication and packaging of high-density multichip interconnect (HDMI) substrates
Author_Institution :
Hughes Aircraft Co., Newport Beach, CA, USA
Abstract :
A process is described for the fabrication of high-density multichip interconnect (HDMI) substrates based on 6-in. diameter silicon or alumina wafers, a special low-coefficient-of-thermal-expansion polyimide dielectric, and aluminium metallization. Key issues in the assembly and hermetic packaging of large HDMI substrates, including tape-automated bonding interconnection, die attachment, and rework, are discussed. Large 2×4 in. and 4×4 in. aluminum nitride packages are being developed that are compatible with the silicon substrates, have a high thermal conductivity, and can be hermetically sealed
Keywords :
alumina; aluminium compounds; hybrid integrated circuits; metallisation; packaging; silicon; 2 to 4 inch; 6 inch; Al metallisation; Al2O3 substrates; AlN substrates; Si wafers; TAB; alumina wafers; assembly; die attachment; fabrication; hermetic packaging; hermetically sealed; high density multichip interconnect substrates; high thermal conductivity; high-density multichip; issues; large HDMI substrates; low TCE; low-coefficient-of-thermal-expansion; packaging; polyimide dielectric; rework; tape-automated bonding interconnection; Aluminum; Assembly; Dielectric substrates; Fabrication; Metallization; Packaging; Polyimides; Silicon; Thermal conductivity; Wafer bonding;
Conference_Titel :
Aerospace and Electronics Conference, 1989. NAECON 1989., Proceedings of the IEEE 1989 National
Conference_Location :
Dayton, OH
DOI :
10.1109/NAECON.1989.40444
