Fabrication and packaging of high-density multichip interconnect (HDMI) substrates

Author

Licari, J.J.

Author_Institution

Hughes Aircraft Co., Newport Beach, CA, USA

fYear

1989

fDate

22-26 May 1989

Firstpage

1682

Abstract

A process is described for the fabrication of high-density multichip interconnect (HDMI) substrates based on 6-in. diameter silicon or alumina wafers, a special low-coefficient-of-thermal-expansion polyimide dielectric, and aluminium metallization. Key issues in the assembly and hermetic packaging of large HDMI substrates, including tape-automated bonding interconnection, die attachment, and rework, are discussed. Large 2×4 in. and 4×4 in. aluminum nitride packages are being developed that are compatible with the silicon substrates, have a high thermal conductivity, and can be hermetically sealed

Keywords

alumina; aluminium compounds; hybrid integrated circuits; metallisation; packaging; silicon; 2 to 4 inch; 6 inch; Al metallisation; Al₂O₃ substrates; AlN substrates; Si wafers; TAB; alumina wafers; assembly; die attachment; fabrication; hermetic packaging; hermetically sealed; high density multichip interconnect substrates; high thermal conductivity; high-density multichip; issues; large HDMI substrates; low TCE; low-coefficient-of-thermal-expansion; packaging; polyimide dielectric; rework; tape-automated bonding interconnection; Aluminum; Assembly; Dielectric substrates; Fabrication; Metallization; Packaging; Polyimides; Silicon; Thermal conductivity; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace and Electronics Conference, 1989. NAECON 1989., Proceedings of the IEEE 1989 National

Conference_Location

Dayton, OH

Type

conf

DOI

10.1109/NAECON.1989.40444

Filename

40444