DocumentCode
2992670
Title
Fabrication and performance of GaN-based two dimensional photonic crystal surface emitting lasers
Author
Lu, Tien-Chang ; Kao, Tsung-Ting ; Chen, Shih-Wei ; Liu, Tzu-Wei ; Yu, Peichen ; Kuo, Hao-Chung ; Wang, Shing-Chung ; Fan, Shanhui
Author_Institution
Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu
fYear
2008
fDate
14-18 Sept. 2008
Firstpage
187
Lastpage
188
Abstract
We demonstrated GaN-based two-dimensional photonic crystal surface emitting lasers with a low threshold pumping energy density of about 2.7 mJ/cm2 and a large spontaneous coupling factor of 5times10-3, and lasing actions from three different band-edges.
Keywords
III-V semiconductors; gallium compounds; laser beams; optical fabrication; optical materials; photonic crystals; surface emitting lasers; GaN; GaN-based photonic crystal laser; laser fabrication; spontaneous coupling factor; surface emitting laser; threshold pumping energy density; Frequency; Laser excitation; Laser feedback; Laser modes; Lattices; Optical device fabrication; Optical surface waves; Photonic crystals; Pump lasers; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location
Sorrento
Print_ISBN
978-1-4244-1782-7
Electronic_ISBN
978-1-4244-1783-4
Type
conf
DOI
10.1109/ISLC.2008.4636072
Filename
4636072
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