DocumentCode
2992722
Title
High brightness and ultra-narrow beam 850 nm GaAs/AlGaAs photonic band crystal lasers and first uncoupled PBC single-mode arrays
Author
Kettler, T. ; Posilovic, K. ; Fricke, J. ; Ressel, P. ; Ginolas, A. ; Pohl, U.W. ; Shchukin, V.A. ; Ledentsov, N.N. ; Bimberg, D. ; Jönsson, J. ; Weyers, M. ; Erbert, G. ; Tränkle, G.
Author_Institution
Inst. fur Festkorperphys., Tech. Univ. Berlin, Berlin
fYear
2008
fDate
14-18 Sept. 2008
Firstpage
193
Lastpage
194
Abstract
850 nm PBC broad area lasers demonstrate ultra-narrow vertical beam divergence of 7deg and ultra-high brightness. First arrays of uncoupled single-mode PBC-lasers are demonstrated.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser modes; optical materials; photonic crystals; semiconductor lasers; GaAs-AlGaAs; high brightness laser; photonic band crystal lasers; ultra-narrow beam lasers; uncoupled PBC single-mode arrays; wavelength 850 nm; Brightness; Gallium arsenide; Laser beams; Optical arrays; Optical filters; Optical pumping; Optical refraction; Photonic crystals; Pump lasers; Semiconductor laser arrays;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location
Sorrento
Print_ISBN
978-1-4244-1782-7
Electronic_ISBN
978-1-4244-1783-4
Type
conf
DOI
10.1109/ISLC.2008.4636075
Filename
4636075
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