DocumentCode :
2992722
Title :
High brightness and ultra-narrow beam 850 nm GaAs/AlGaAs photonic band crystal lasers and first uncoupled PBC single-mode arrays
Author :
Kettler, T. ; Posilovic, K. ; Fricke, J. ; Ressel, P. ; Ginolas, A. ; Pohl, U.W. ; Shchukin, V.A. ; Ledentsov, N.N. ; Bimberg, D. ; Jönsson, J. ; Weyers, M. ; Erbert, G. ; Tränkle, G.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Berlin
fYear :
2008
fDate :
14-18 Sept. 2008
Firstpage :
193
Lastpage :
194
Abstract :
850 nm PBC broad area lasers demonstrate ultra-narrow vertical beam divergence of 7deg and ultra-high brightness. First arrays of uncoupled single-mode PBC-lasers are demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser beams; laser modes; optical materials; photonic crystals; semiconductor lasers; GaAs-AlGaAs; high brightness laser; photonic band crystal lasers; ultra-narrow beam lasers; uncoupled PBC single-mode arrays; wavelength 850 nm; Brightness; Gallium arsenide; Laser beams; Optical arrays; Optical filters; Optical pumping; Optical refraction; Photonic crystals; Pump lasers; Semiconductor laser arrays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 2008. ISLC 2008. IEEE 21st International
Conference_Location :
Sorrento
Print_ISBN :
978-1-4244-1782-7
Electronic_ISBN :
978-1-4244-1783-4
Type :
conf
DOI :
10.1109/ISLC.2008.4636075
Filename :
4636075
Link To Document :
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