DocumentCode
2992784
Title
Design of an RF BJT-Low Noise Amplifier at 1GHz
Author
Fatmadiana, Sharifah ; Hatta, Wan Muhamad ; Soin, Norhayati
Author_Institution
Univ. Malaya, Kuala Lumpur
fYear
2006
fDate
Oct. 29 2006-Dec. 1 2006
Firstpage
747
Lastpage
750
Abstract
A fully-integrated RF low noise amplifier (LNA) suitable for low-voltage applications is proposed using bipolar junction transistors (BJT) cascaded stages. The proposed design aims to provide gain with low bias current consequently lower power dissipation and lower noise figure (NF). The circuit is designed and simulated using MultiSim9 from Electronics Workbench Design Suite Edition 9. The proposed amplifier exhibits 3.296 dB small- signal gain, reverse isolation of -6.68 dB and 0.359 dB noise figure at 1GHz.
Keywords
bipolar transistors; low noise amplifiers; MultiSim9; RF BJT-low noise amplifier; bipolar junction transistor; frequency 1 GHz; gain 3.296 dB; loss -6.68 dB; low-voltage application; noise figure; noise figure 0.359 dB; power dissipation; radio frequency; Capacitance; Circuit simulation; Circuit topology; Impedance; Low-noise amplifiers; Noise figure; Radio frequency; Radiofrequency amplifiers; Resistors; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
0-7803-9730-4
Electronic_ISBN
0-7803-9731-2
Type
conf
DOI
10.1109/SMELEC.2006.380735
Filename
4266718
Link To Document