Title :
Temperature-Insensitive Wavelength Emission and Absorption Characteristics of GaNAsBi/GaAs DH Diodes
Author :
Oe, K. ; Tanaka, Y. ; Huang, W. ; Feng, G. ; Yamashita, K. ; Kondo, Y. ; Tsuji, S. ; Yoshimoto, M.
Author_Institution :
Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan, oeku@dj.kit.ac.jp
Abstract :
Temperature-insensitive wavelength electroluminescent emission and absorption characteristics are obtained from GaNyAs1-x-yBix/GaAs double-heterostructure diodes. The temperature dependence of the EL peak wavelength and the absorption edge is 0.09 nm / K and 0.2 meV / K, respectively.
Keywords :
Absorption; Bismuth; DH-HEMTs; Electroluminescence; Fiber lasers; Gallium arsenide; Molecular beam epitaxial growth; Photonic band gap; Plasma temperature; Semiconductor diodes;
Conference_Titel :
Optical Communications, 2006. ECOC 2006. European Conference on
Conference_Location :
Cannes, France
Print_ISBN :
978-2-912328-39-7
Electronic_ISBN :
978-2-912328-39-7
DOI :
10.1109/ECOC.2006.4801232
