DocumentCode :
2992947
Title :
Temperature Characteristics of Electro-absorption Effect of GaInNAs
Author :
Hashimoto, Jun-ichi ; Koyama, Kenji ; Ishizuka, Takashi ; Tsuji, Yukihiro ; Fujii, Kousuke ; Yamada, Takashi ; Katsuyama, Tsukuru
Author_Institution :
Optoelectronics Industry and Technology Development Association (OITDA), Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD, 1, Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan, E-mail: hashimoto-junichi@sei.co.jp
fYear :
2006
fDate :
24-28 Sept. 2006
Firstpage :
1
Lastpage :
2
Abstract :
We investigated the temperature characteristics of the EA effect of GaInNAs. Excellent characteristics were obtained in which large extinction ratios around 20 dB were obtained for the 300-,¿-long device, and they were little dependent on temperature.
Keywords :
Carrier confinement; Erbium; Extinction ratio; Gallium arsenide; High speed optical techniques; Optical materials; Optical modulation; Power measurement; Temperature dependence; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communications, 2006. ECOC 2006. European Conference on
Conference_Location :
Cannes, France
Print_ISBN :
978-2-912328-39-7
Electronic_ISBN :
978-2-912328-39-7
Type :
conf
DOI :
10.1109/ECOC.2006.4801239
Filename :
4801239
Link To Document :
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