Title :
Low Noise AllnAs Planar Junction Avalanche Photodiode for 10 Gb/s Applications
Author :
Rouvie, A. ; Carpentier, D. ; Lagay, N. ; Decobert, J. ; Pommereau, F. ; Achouche, M.
Author_Institution :
Alcatel Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France anne.rouvie@3-5lab.fr
Abstract :
We demonstrate a back-illuminated planar AllnAs APD. We obtain a low excess noise factor of 4 at M=10 measured with an accurate noise characterization method and a high bandwidth over 10 GHz (M=1.5 to 7).
Keywords :
Absorption; Assembly; Avalanche photodiodes; Bandwidth; Dark current; Indium phosphide; Lighting; Noise measurement; Optical materials; Optical noise;
Conference_Titel :
Optical Communications, 2006. ECOC 2006. European Conference on
Conference_Location :
Cannes, France
Print_ISBN :
978-2-912328-39-7
Electronic_ISBN :
978-2-912328-39-7
DOI :
10.1109/ECOC.2006.4801244
