Title :
Auger PID Characterization of Threshold Voltage Shift and Application in Bond pad Monitoring of Wafer Fabrication
Author :
Tan, Y.H.M. ; Younan, Hua ; Timothy, Ling ; Siping, Zhao
Author_Institution :
Chartered Semicond. Mfg Ltd, Singapore
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
This paper presents the effects of Auger electron spectroscopy on semiconductor device´s threshold voltage performance. Bond pads connected to gate of transistors were exposed to different beam energy of 0, 3, 5, 10, 15 and 20 keV for an average of 2.5 minutes. Vt measurements were collected once at pre-exposure and thrice at post-exposure. The evaluation results show that the transistor Vt was impacted and shifted after exposure to electron beam at varying energy levels (3, 5,10, 15 and 20 keV) during AES analysis.
Keywords :
Auger electron spectroscopy; semiconductor device manufacture; Auger PID characterization; Auger electron spectroscopy; bond pad monitoring; electron beam exposure; energy levels; semiconductor device threshold voltage shift; transistor gates; wafer fabrication; Contamination; Corrosion; Electron beams; Etching; Fabrication; Monitoring; Passivation; Production; Threshold voltage; Wafer bonding;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.380764
