Title :
Studies on Failure Mechanism of ET High Via Resistance in Wafer Fabrication
Author :
Younan, Hua ; Khim, Tan Sock ; Kun, Li ; Siping, Zhao
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
In this paper, an ET high via resistance case was investigated. TEM/EDX technique was used for identification of the root cause. Failure mechanism of Al fluoride defects is discussed. Some preventive actions/solutions were implemented to improve the process margin and eliminate the problem.
Keywords :
X-ray chemical analysis; aluminium compounds; failure analysis; integrated circuit interconnections; integrated circuit reliability; transmission electron microscopy; EDX; ET high via resistance; TEM; aluminium fluoride defects; failure mechanism; metal interconnect; wafer fabrication; Chemicals; Contamination; Electrons; Fabrication; Failure analysis; Filters; Image analysis; Image color analysis; Textile industry; Wood industry;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.380765
