DocumentCode
2993371
Title
Minority Carrier Lifetime Measurement by MW-PCD Based on Doppler Effect
Author
Zhang, Hao ; Chen, Changying ; He, Xuan
Author_Institution
Dept. of Photoelectric Eng., Jinan Univ., Guangzhou, China
fYear
2012
fDate
21-23 May 2012
Firstpage
1
Lastpage
4
Abstract
In order to measure the minority carrier lifetime of semiconductor, a method of microwave photoconductivity technique (MW-PCD) based on Doppler Effect is used in this paper. By introducing a frequency shifter and a mixer, the high frequency detection signal is modulated and demodulated to be low frequency received signal, which can reduce the performance requirements of the devices in the received end of system. The key technologies about the selection of laser wavelength and microwave frequency, the design of frequency shifter and mixer are studied. The formula contains all related factors in the measuring process is summed. Experiments show that the resultant curves are consistent with the formula highly, confirming the feasibility of the measurement method. The new measurement method can measure the minority lifetime without destructiveness and contact, reduce system cost, improve the signal to noise ratio, and make great sense in optimizing the performance of semiconductor materials.
Keywords
Doppler effect; carrier lifetime; elemental semiconductors; high-frequency effects; minority carriers; optimisation; photoconductivity; silicon; Doppler effect; MW-PCD; Si; frequency shifter design; high frequency detection signal; laser wavelength; low frequency received signal; microwave frequency; microwave photoconductivity technique method; minority carrier lifetime measurement; mixer design; performance optimization; resultant curves; semiconductor materials; signal-to-noise ratio improvement; system cost reduction; Conductivity; Frequency modulation; Masers; Microwave filters; Microwave measurements; Microwave oscillators; Semiconductor device measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location
Shanghai
ISSN
2156-8464
Print_ISBN
978-1-4577-0909-8
Type
conf
DOI
10.1109/SOPO.2012.6270476
Filename
6270476
Link To Document