Advances in InP-based optoelectronic devices and circuits for optical communication, interconnection and signal processing

Author

Wada, Osamu

Author_Institution

Femtosecond Technol. Res. Assoc., FESTA Lab., Tsukuba, Japan

fYear

1997

fDate

11-15 May 1997

Firstpage

7

Lastpage

10

Abstract

Integration technology is indispensable for improving device performance, functionality and cost reduction. Recent progress of monolithic and hybrid integration in InP-based optoelectronics for applications to telecommunication, interconnection and signal-processing systems is described. Towards further increases of system throughput in the 21st century, novel device principles are desired to be explored by a variety of physics in InP-based materials. An approach to develop ultrafast optoelectronic devices for Terabit/sec systems is discussed

Keywords

III-V semiconductors; indium compounds; integrated optoelectronics; optical communication equipment; optical information processing; optical interconnections; InP; hybrid integration; interconnection; monolithic integration; optical communication; optoelectronic circuits; signal processing; ultrafast optoelectronic devices; Costs; Integrated circuit interconnections; Optical coupling; Optical devices; Optical fiber communication; Optical signal processing; Optoelectronic devices; Throughput; Ultrafast optics; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600015

Filename

600015