DocumentCode
2993480
Title
Conductivity of Cubic GaMnN Grown on Undoped GaN Layers
Author
Sundaramoorthy, V.K. ; Foxon, C.T. ; Novikov, S.V. ; Edmonds, K.W. ; Harrison, I.
Author_Institution
Univ. of Nottingham, Nottingham
fYear
2006
fDate
Oct. 29 2006-Dec. 1 2006
Firstpage
915
Lastpage
918
Abstract
The conductivity of GaMnN layer grown on thick undoped GaN layers analyzed by electrical characterization is reported here. The GaMnN conductivity grown on thick undoped GaN layers were found to be n-type, whereas the GaMnN conductivity on thin undoped GaN is found to be p-type. One possible explanation could be the relaxed strain associated with the increased undoped GaN layer thickness.
Keywords
III-V semiconductors; electrical conductivity; gallium compounds; manganese compounds; semiconductor epitaxial layers; semiconductor junctions; stress relaxation; wide band gap semiconductors; GaMnN-GaN; cubic gallium manganese nitride; electrical conductivity; n-type conductivity; p-type conductivity; semiconductor junction; strain relaxation; undoped gallium nitride layers; Conductivity; Etching; Extraterrestrial measurements; Gallium arsenide; Gallium nitride; Gold; Heterojunction bipolar transistors; Plasma materials processing; Radio frequency; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
0-7803-9730-4
Electronic_ISBN
0-7803-9731-2
Type
conf
DOI
10.1109/SMELEC.2006.380772
Filename
4266755
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