Title :
Conductivity of Cubic GaMnN Grown on Undoped GaN Layers
Author :
Sundaramoorthy, V.K. ; Foxon, C.T. ; Novikov, S.V. ; Edmonds, K.W. ; Harrison, I.
Author_Institution :
Univ. of Nottingham, Nottingham
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
The conductivity of GaMnN layer grown on thick undoped GaN layers analyzed by electrical characterization is reported here. The GaMnN conductivity grown on thick undoped GaN layers were found to be n-type, whereas the GaMnN conductivity on thin undoped GaN is found to be p-type. One possible explanation could be the relaxed strain associated with the increased undoped GaN layer thickness.
Keywords :
III-V semiconductors; electrical conductivity; gallium compounds; manganese compounds; semiconductor epitaxial layers; semiconductor junctions; stress relaxation; wide band gap semiconductors; GaMnN-GaN; cubic gallium manganese nitride; electrical conductivity; n-type conductivity; p-type conductivity; semiconductor junction; strain relaxation; undoped gallium nitride layers; Conductivity; Etching; Extraterrestrial measurements; Gallium arsenide; Gallium nitride; Gold; Heterojunction bipolar transistors; Plasma materials processing; Radio frequency; Substrates;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.380772
