• DocumentCode
    2993548
  • Title

    0.9 W/mm, 76% P.A.E. (7 GHz) GaInAs/InP composite channel HEMTs

  • Author

    Shealy, J.B. ; Matloubian, M. ; Liu, T.Y. ; Lam, W. ; Ngo, C.

  • Author_Institution
    Hughes Res. Labs., Malibu, CA, USA
  • fYear
    1997
  • fDate
    11-15 May 1997
  • Firstpage
    20
  • Lastpage
    23
  • Abstract
    The power performance of Ga0.47In0.53As/InP composite channel HEMTs at 7 GHz is presented. Devices with a gate width of 300 μm exhibit 0.9 W/mm and 76% power-added-efficiency (P.A.E.) at 7 GHz with a two-terminal breakdown voltage of 13.3 V
  • Keywords
    III-V semiconductors; S-parameters; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; power HEMT; power field effect transistors; 13.3 V; 300 mum; 7 GHz; 76 percent; DC characterization; Ga0.47In0.53As-InP; GaInAs/InP composite channel HEMT; InP; gate width; power performance; power transfer characteristics; power-added-efficiency; small-signal S-parameters; two-terminal breakdown voltage; Contact resistance; Electrical resistance measurement; Fingers; HEMTs; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Ohmic contacts; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1997., International Conference on
  • Conference_Location
    Cape Cod, MA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-3898-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1997.600018
  • Filename
    600018
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2993548