High power InAlAs/InGaAs/InP-HFET grown by MOVPE

Author

Daumann, W. ; Scheffer, F. ; Frost, W. ; Tegude, F.J.

Author_Institution

Gerhard-Mercator Univ., Duisburg, Germany

fYear

1997

fDate

11-15 May 1997

Firstpage

24

Lastpage

27

Abstract

In this study we report the impact of an extended lateral gate-recess process in order to reduce the high electric field at the drain end of the gate and so to improve the breakdown performance. At first, we focus on an HFET fabricated by optical lithography (L_g=0.7 μm). The influence of various gate recess procedures on both the breakdown voltage and the drain saturation current is studied for various thickness of the barrier and supply layer, respectively. High power class A amplifiers exhibiting DC (RF) power capabilities in the range of 4-5 W/mm (0.5-0.75 W/mm) are presented. Then, we introduce a hybrid lithography process combining both optical and electron beam lithography. In this way a shorter gate (L_g=0.35 μm) is asymmetrically positioned in an extended lateral gate recess which enables both high breakdown voltage and increased cut off frequency

Keywords

III-V semiconductors; S-parameters; aluminium compounds; electric breakdown; electron beam lithography; gallium arsenide; indium compounds; microwave field effect transistors; microwave power amplifiers; microwave power transistors; millimetre wave amplifiers; millimetre wave field effect transistors; millimetre wave power transistors; photolithography; power amplifiers; power field effect transistors; semiconductor growth; vapour phase epitaxial growth; 0.35 mum; 0.7 mum; 45 MHz to 45 GHz; DC power capabilities; In_0.52Al_0.48As-In_0.53Ga_0.47As-InP; InP:Fe; MOVPE growth; RF power capabilities; S-parameters; barrier layer thickness; breakdown performance; cut off frequency; drain saturation current; electron beam lithography; extended lateral gate-recess process; high electric field; high power class A amplifiers; hybrid lithography process; mm-wave regime; optical lithography; power InAlAs/InGaAs/InP-HFET; supply layer thickness; Electric breakdown; Epitaxial growth; Epitaxial layers; HEMTs; Indium compounds; Indium gallium arsenide; Lithography; MODFETs; Optical saturation; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600019

Filename

600019