InAlGaP vertical cavity surface emitting lasers (VCSELs): processing and performance

Author

Crawford, M. Hagerott ; Choquette, K.D. ; Hick, R.J. ; Geib, K.M.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

32

Lastpage

35

Abstract

The performance of AlGaInP based visible VCSELs has been advanced with the application of new heterostructure designs and the technique of selective oxidation. Improved performance at elevated temperatures as well as high wallplug efficiency, low threshold devices have been demonstrated for devices operating in the 670-680 nm region. Challenges still remain in demonstrating high performance devices with emission wavelengths shorter than 650 nm

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; ion implantation; optical fabrication; oxidation; quantum well lasers; surface emitting lasers; 25 to 85 C; 670 to 680 nm; AlGaInP; AlGaInP based visible VCSELs; CW lasing; compressively strained quantum wells; elevated temperature performance; heterostructure designs; high wallplug efficiency low threshold devices; ion implantation; performance; processing; selective oxidation; temperature dependent L-I-V data; vertical cavity surface emitting lasers; Apertures; Distributed Bragg reflectors; Fiber lasers; Ion implantation; Optical design; Oxidation; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600021

Filename

600021