Title :
Temperature performance of 1.55 μm vertical cavity lasers with integrated InP/GaInAsP Bragg reflector
Author :
Rapp, S. ; Piprek, J. ; Streubel, K. ; André, J. ; Messmer, E. Rodriguez ; Wallin, J.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
Abstract :
Long wavelength vertical cavity lasers (VCL) have gained considerable interest after the first continuous wave (CW) room temperature (RT) operating devices were fabricated. As a potential light source for future optical communication systems, they offer a number of advantages such as array fabrication, on-chip-testability, cost effective fabrication, and effective fiber coupling. We fabricated 1.55 μm laser diodes based on an integrated GaInAsP/InP mirror. Here we focus on the temperature sensitivity, especially of the threshold current as a function of the gain offset (cavity tuning)
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser cavity resonators; laser mirrors; laser tuning; quantum well lasers; 1.55 mum; GaInAsP quantum wells; InP-GaInAsP; MQW structure; array fabrication; cavity tuning; continuous wave room temperature operation; cost effective fabrication; effective fiber coupling; gain offset; integrated InP/GaInAsP Bragg reflector; laser diodes; long wavelength vertical cavity lasers; on-chip-testability; temperature performance; temperature sensitivity; threshold current; vertical cavity lasers; Costs; Diode lasers; Fiber lasers; Light sources; Optical arrays; Optical coupling; Optical device fabrication; Optical fiber communication; Optical fiber devices; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600022
