Photo-pumped operation of InGaAsP vertical-cavity lasers on Si fabricated by wafer bonding

Author

Wada, Hiroshi ; Takamori, Takeshi ; Kamijoh, Takeshi

Author_Institution

Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1997

fDate

11-15 May 1997

Firstpage

40

Lastpage

43

Abstract

Long-wavelength vertical cavity lasers have been successfully fabricated on Si substrates using a wafer bonding technique. InGaAs/InGaAsP multi-quantum well active layers with 40.5-pair InGaAsP/InP stacked mirrors have been directly bonded on 3.5-pair Al₂O₃/a-Si mirrors deposited on Si substrates. The sample has been optically pumped at room temperature and lasing operation at 1.58-μm has been achieved

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser cavity resonators; laser mirrors; optical fabrication; optical interconnections; optical pumping; quantum well lasers; wafer bonding; 1.58 mum; Al₂O₃-Si; Al₂O₃/a-Si mirrors; InGaAs-InGaAsP; InGaAs/InGaAsP multi-quantum well active layers; InGaAsP vertical-cavity lasers; InGaAsP-InP; InGaAsP/InP stacked mirrors; MQW structures; Si; Si substrates; lasing operation; long-wavelength vertical cavity lasers; optical interconnections; optical pumping; photo-pumped operation; room temperature; wafer bonding; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Laboratories; Mirrors; Semiconductor lasers; Substrates; Temperature; Vertical cavity surface emitting lasers; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600023

Filename

600023