Suppression of interdiffusion of Fe and Zn in InP:Fe/InP:Zn structures

Author

Karlsson, S. ; Lourdudoss, S.

Author_Institution

Dept. of Electron., R. Inst. of Technol., Kista, Sweden

fYear

1997

fDate

11-15 May 1997

Firstpage

51

Lastpage

54

Abstract

Fe in semi-insulating (SI) InP:Fe has a low thermal stability when it is grown adjacent to p-InP:Zn. This report investigates the possibility of using S-codoping of the SI material to suppress the interdiffusion of Fe and Zn. At a sulphur codoping concentration of 5×10¹⁷ cm^-3 no interdiffusion occurred and the material had a resistivity of 10⁷ Ωcm, as indicated by SIMS and I-V analysis of n/SI/n and n/SI/p structures. These results show that S codoping of SI-InP can be used to suppress the interdiffusion of Fe and Zn while still maintaining the SI properties of the material

Keywords

III-V semiconductors; annealing; chemical interdiffusion; electrical resistivity; indium compounds; iron; secondary ion mass spectra; semiconductor doping; semiconductor junctions; sulphur; thermal stability; zinc; 1E7 ohmcm; I-V analysis; InP:Fe,S-InP:Zn; InP:Fe/InP:Zn structures; S-codoping; SIMS profiles; annealing; interdiffusion suppression; n/semi-insulating/n structures; n/semi-insulating/p structures; resistivity; semi-insulating InP:Fe; thermal stability; Annealing; Conductivity; Indium phosphide; Insulation; Iron; Semiconductor materials; Substrates; Thermal stability; Wet etching; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600026

Filename

600026