Fe distribution around hydride VPE InP:Fe regrown laser stripes

In hydride VPE, mesa stripe structures are regrown in a lateral growth mode exceeding the normal planar growth rate by more than an order of magnitude depending on the stripe orientation. During the embedding of mesas with InP:Fe a dilution of the Fe dopant due to the increased growth velocity in the vicinity of the original stripe might occur. An insufficient Fe level may effect loss of the required semi-insulating character. Thus, we analyzed regrown mesa structures with ⟨011⟩ and ⟨01-1⟩ orientation by SIMS. A moderate dilution of the Fe dopant down to ~30 % was found for lateral growth zones with an increase in growth rate up to a factor of 35. Therefore, our data indicate that the attractive advantages of the rapid lateral regrowth can be used without changing the conventional doping conditions