DocumentCode
2993738
Title
Simulation of High Efficiency Nc-Si /uc-Si Tandem Solar Cells
Author
Fengxiang Chen ; Wenying Xu ; Lisheng Wang ; Yingyan Yi
Author_Institution
Dept. of Phys. Sci. & Technol., Wuhan Univ. of Technol., Wuhan, China
fYear
2012
fDate
21-23 May 2012
Firstpage
1
Lastpage
4
Abstract
In order to improve the conversion efficiency of thin film solar cells, tandem technology is used to absorb the solar spectrum. Since nano-crystalline silicon film has the characteristic of good photosensitivity, good absorption coefficient and stability under light soak, this thin film is expected to replace the amorphous silicon as the top solar cell in tandem solar cells. In this paper, the nc-Si/uc-Si tandem solar cell was optimized by simulation. The simulation results show that the band gap of the top cell has very important influence on the conversion efficiency of the tandem cell. When the band gap increases from 1.8eV to 2.1eV, the efficiency can be raised more than 3 percentage points. And the influences of the bottom cell, the tunneling junction are also discussed.
Keywords
absorption coefficients; elemental semiconductors; energy gap; nanostructured materials; semiconductor thin films; silicon; solar cells; thin film devices; tunnelling; Si-Si; absorption coefficient; amorphous silicon; band gap; conversion efficiency; electron volt energy 1.8 eV to 2.1 eV; high efficiency tandem solar cells; light soak; nanocrystalline silicon film; photosensitivity; solar spectrum; thin film solar cells; tunneling junction; Amorphous silicon; Doping; Junctions; Photonic band gap; Photovoltaic cells; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location
Shanghai
ISSN
2156-8464
Print_ISBN
978-1-4577-0909-8
Type
conf
DOI
10.1109/SOPO.2012.6270493
Filename
6270493
Link To Document