• DocumentCode
    2993738
  • Title

    Simulation of High Efficiency Nc-Si /uc-Si Tandem Solar Cells

  • Author

    Fengxiang Chen ; Wenying Xu ; Lisheng Wang ; Yingyan Yi

  • Author_Institution
    Dept. of Phys. Sci. & Technol., Wuhan Univ. of Technol., Wuhan, China
  • fYear
    2012
  • fDate
    21-23 May 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In order to improve the conversion efficiency of thin film solar cells, tandem technology is used to absorb the solar spectrum. Since nano-crystalline silicon film has the characteristic of good photosensitivity, good absorption coefficient and stability under light soak, this thin film is expected to replace the amorphous silicon as the top solar cell in tandem solar cells. In this paper, the nc-Si/uc-Si tandem solar cell was optimized by simulation. The simulation results show that the band gap of the top cell has very important influence on the conversion efficiency of the tandem cell. When the band gap increases from 1.8eV to 2.1eV, the efficiency can be raised more than 3 percentage points. And the influences of the bottom cell, the tunneling junction are also discussed.
  • Keywords
    absorption coefficients; elemental semiconductors; energy gap; nanostructured materials; semiconductor thin films; silicon; solar cells; thin film devices; tunnelling; Si-Si; absorption coefficient; amorphous silicon; band gap; conversion efficiency; electron volt energy 1.8 eV to 2.1 eV; high efficiency tandem solar cells; light soak; nanocrystalline silicon film; photosensitivity; solar spectrum; thin film solar cells; tunneling junction; Amorphous silicon; Doping; Junctions; Photonic band gap; Photovoltaic cells; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Optoelectronics (SOPO), 2012 Symposium on
  • Conference_Location
    Shanghai
  • ISSN
    2156-8464
  • Print_ISBN
    978-1-4577-0909-8
  • Type

    conf

  • DOI
    10.1109/SOPO.2012.6270493
  • Filename
    6270493