Ultrahigh-speed InGaP/AlGaAs/InGaAs HBTs using Mg as the base dopant

Author

Kobayashi, S. ; Fujita, T. ; Yakihara, T. ; Oka, S. ; Miura, A.

Author_Institution

R&D Dept., Teratec Corp., Tokyo, Japan

fYear

1997

fDate

11-15 May 1997

Firstpage

58

Lastpage

61

Abstract

We have fabricated ultrahigh-speed InGaP/AlGaAs/InGaAs graded-base hetero-bipolar transistors (HBTs), which employ Mg as the base-region p-type dopant. In addition, the dead region under the base metal contact layer has been etched away. Even with a HBT base layer as thick as 60 nm, we obtained excellent frequency characteristics of the short-circuit current-gain frequency ft and the maximum frequency of oscillation fmax as high as approximately 140 GHz and 230 GHz, respectively. We obtained maximum toggle frequency of 22.5 GHz and direct oscillation frequency of 80 GHz for the static frequency divider and the base common transistor oscillator, respectively, by using the 4-inch full process of InGaP/AlGaAs/InGaAs graded-base HBT

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; magnesium; semiconductor doping; InGaP-AlGaAs-InGaAs:Mg; Mg base p-type dopant; base common transistor oscillator; direct oscillation frequency; maximum frequency of oscillation; short-circuit current-gain frequency; static frequency divider; toggle frequency; ultrahigh-speed InGaP/AlGaAs/InGaAs graded-base HBT; Etching; Fabrication; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Oscillators; Parasitic capacitance; Prototypes; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600028

Filename

600028