• DocumentCode
    2993840
  • Title

    High speed wafer dicing with ablation laser cut

  • Author

    Way, David Wong Chee ; Lee Chai Ying

  • Author_Institution
    Infineon Technol. (M) Sdn. Bhd. Malaysia, FTZ, Batu Berendam, Malaysia
  • fYear
    2008
  • fDate
    4-6 Nov. 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Conventional blade dicing is well known as standard process for semiconductor wafer singulation. As of to-date, wafer technologies employed many changes such as larger wafer diameter, thinner chip ≤ 100μm and heavy metal structure in the saw street. Consequently, unforeseen defects such as longer sawing time lead to wafer bond pad corrosion, chip crack and larger backside chipping arised. Blade dicing can no longer fulfill the demands of new emerging types of semiconductor devices. New chips separation methods are investigated here. Laser cutting is a relatively recent technology that offers the solution for high-speed dicing for thin wafer. Main focus in this paper is established of ablation laser cut method for discrete devices and pre-production experiences. Others laser cut technologies are qualitatively discussed.
  • Keywords
    laser beam cutting; wafer bonding; ablation laser cut; chip crack; high speed wafer dicing; laser cutting; semiconductor devices; semiconductor wafer singulation; size 100 mum; wafer bond pad corrosion; Laser ablation; Laser beam cutting;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Manufacturing Technology Symposium (IEMT), 2008 33rd IEEE/CPMT International
  • Conference_Location
    Penang
  • ISSN
    1089-8190
  • Print_ISBN
    978-1-4244-3392-6
  • Electronic_ISBN
    1089-8190
  • Type

    conf

  • DOI
    10.1109/IEMT.2008.5507855
  • Filename
    5507855