DocumentCode :
2993840
Title :
High speed wafer dicing with ablation laser cut
Author :
Way, David Wong Chee ; Lee Chai Ying
Author_Institution :
Infineon Technol. (M) Sdn. Bhd. Malaysia, FTZ, Batu Berendam, Malaysia
fYear :
2008
fDate :
4-6 Nov. 2008
Firstpage :
1
Lastpage :
3
Abstract :
Conventional blade dicing is well known as standard process for semiconductor wafer singulation. As of to-date, wafer technologies employed many changes such as larger wafer diameter, thinner chip ≤ 100μm and heavy metal structure in the saw street. Consequently, unforeseen defects such as longer sawing time lead to wafer bond pad corrosion, chip crack and larger backside chipping arised. Blade dicing can no longer fulfill the demands of new emerging types of semiconductor devices. New chips separation methods are investigated here. Laser cutting is a relatively recent technology that offers the solution for high-speed dicing for thin wafer. Main focus in this paper is established of ablation laser cut method for discrete devices and pre-production experiences. Others laser cut technologies are qualitatively discussed.
Keywords :
laser beam cutting; wafer bonding; ablation laser cut; chip crack; high speed wafer dicing; laser cutting; semiconductor devices; semiconductor wafer singulation; size 100 mum; wafer bond pad corrosion; Laser ablation; Laser beam cutting;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Manufacturing Technology Symposium (IEMT), 2008 33rd IEEE/CPMT International
Conference_Location :
Penang
ISSN :
1089-8190
Print_ISBN :
978-1-4244-3392-6
Electronic_ISBN :
1089-8190
Type :
conf
DOI :
10.1109/IEMT.2008.5507855
Filename :
5507855
Link To Document :
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