DocumentCode
2993840
Title
High speed wafer dicing with ablation laser cut
Author
Way, David Wong Chee ; Lee Chai Ying
Author_Institution
Infineon Technol. (M) Sdn. Bhd. Malaysia, FTZ, Batu Berendam, Malaysia
fYear
2008
fDate
4-6 Nov. 2008
Firstpage
1
Lastpage
3
Abstract
Conventional blade dicing is well known as standard process for semiconductor wafer singulation. As of to-date, wafer technologies employed many changes such as larger wafer diameter, thinner chip ≤ 100μm and heavy metal structure in the saw street. Consequently, unforeseen defects such as longer sawing time lead to wafer bond pad corrosion, chip crack and larger backside chipping arised. Blade dicing can no longer fulfill the demands of new emerging types of semiconductor devices. New chips separation methods are investigated here. Laser cutting is a relatively recent technology that offers the solution for high-speed dicing for thin wafer. Main focus in this paper is established of ablation laser cut method for discrete devices and pre-production experiences. Others laser cut technologies are qualitatively discussed.
Keywords
laser beam cutting; wafer bonding; ablation laser cut; chip crack; high speed wafer dicing; laser cutting; semiconductor devices; semiconductor wafer singulation; size 100 mum; wafer bond pad corrosion; Laser ablation; Laser beam cutting;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Manufacturing Technology Symposium (IEMT), 2008 33rd IEEE/CPMT International
Conference_Location
Penang
ISSN
1089-8190
Print_ISBN
978-1-4244-3392-6
Electronic_ISBN
1089-8190
Type
conf
DOI
10.1109/IEMT.2008.5507855
Filename
5507855
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