Title :
Monte Carlo Simulation of Surface Annealing before Epitaxial Growth
Author :
Dee, Chang Fu ; Majlis, Burhanuddin Yeop
Author_Institution :
Univ. Kebangsaan Malaysia, Bangi
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
Presented is a molecular beam epitaxial pre-growth-annealing simulation. Simulation done using Monte Carlo method by taking consideration of GaAs decomposition, As desorption and absorption process from the surface. Surface roughness information can be deducted from the percentages of step-edge-site density. It is compared to the specular reflected beam from reflected high energy electron diffraction (RHEED). Good agreement with the experimental data shows the correctness of the simulation model.
Keywords :
III-V semiconductors; Monte Carlo methods; annealing; desorption; gallium arsenide; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; surface roughness; GaAs; Monte Carlo method; RHEED; absorption process; decomposition; desorption; molecular beam epitaxial pregrowth-annealing simulation; reflected high energy electron diffraction; specular reflected beam; step-edge-site density; surface annealing; surface roughness; Absorption; Atomic layer deposition; Computational modeling; Epitaxial growth; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Semiconductor process modeling; Simulated annealing; Surface treatment;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.380794
