Monte Carlo Simulation of Surface Annealing before Epitaxial Growth

Author

Dee, Chang Fu ; Majlis, Burhanuddin Yeop

Author_Institution

Univ. Kebangsaan Malaysia, Bangi

fYear

2006

fDate

Oct. 29 2006-Dec. 1 2006

Firstpage

1024

Lastpage

1027

Abstract

Presented is a molecular beam epitaxial pre-growth-annealing simulation. Simulation done using Monte Carlo method by taking consideration of GaAs decomposition, As desorption and absorption process from the surface. Surface roughness information can be deducted from the percentages of step-edge-site density. It is compared to the specular reflected beam from reflected high energy electron diffraction (RHEED). Good agreement with the experimental data shows the correctness of the simulation model.

Keywords

III-V semiconductors; Monte Carlo methods; annealing; desorption; gallium arsenide; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; surface roughness; GaAs; Monte Carlo method; RHEED; absorption process; decomposition; desorption; molecular beam epitaxial pregrowth-annealing simulation; reflected high energy electron diffraction; specular reflected beam; step-edge-site density; surface annealing; surface roughness; Absorption; Atomic layer deposition; Computational modeling; Epitaxial growth; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Semiconductor process modeling; Simulated annealing; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

0-7803-9730-4

Electronic_ISBN

0-7803-9731-2

Type

conf

DOI

10.1109/SMELEC.2006.380794

Filename

4266777