Title :
Analysis of Poly Resistor Mismatch
Author :
Tan, Philip Beow Yew ; Kordesch, Albert Victor ; Sidek, Othman
Author_Institution :
Silterra Malaysia Sdn. Bhd., Kulim
fDate :
Oct. 29 2006-Dec. 1 2006
Abstract :
In this paper we analyzed the mismatch characteristics of poly resistors. We found that the P+ poly resistor mismatch characteristics do not follow the linear inverse square root dependence. Instead, the P+ poly resistor mismatch follows the quadratic of inverse square root (or a simple inverse area) dependence. N+ poly resistor mismatch, however does obey the expected standard inverse square root dependence.
Keywords :
resistors; N+ poly resistor; P+ poly resistor; mismatch analysis; Boron; CMOS technology; Electrical resistance measurement; Etching; Grain size; Kelvin; Lithography; Resistors; Silicon; Testing;
Conference_Titel :
Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
0-7803-9730-4
Electronic_ISBN :
0-7803-9731-2
DOI :
10.1109/SMELEC.2006.380795
