Fabrication of Lithium Niobate p-n Junctions

Author

Pei, Zidong ; Hu, Qian ; Kong, Yongfa ; Rupp, Romano ; Xu, Jingjun

Author_Institution

MOE Key Lab. of Weak-Light Nonlinear Photonics, Nankai Univ., Tianjin, China

fYear

2012

fDate

21-23 May 2012

Firstpage

1

Lastpage

4

Abstract

For lack of p-type lithium niobate crystals, the application of LiNbO₃ is limited in active integrated optics. Here several p-type LiNbO₃ crystals were investigated, and various LiNbO₃ p-n junctions were fabricated by liquid phase epitaxy, sputtering and laser molecular beam epitaxy. The current-voltage characteristics of these junctions were measured. The experiment results show that thermo-electric oxidized 0.1 wt% Fe: LiNbO₃ / 0.1 wt% Fe: LiNbO₃ junction fabricated by sputtering has clear rectifying characteristic. These results are helpful for all-optical integrated photonics.

Keywords

iron; liquid phase epitaxial growth; lithium compounds; molecular beam epitaxial growth; p-n junctions; rectification; semiconductor epitaxial layers; sputter deposition; thermoelectricity; LiNbO₃:Fe-LiNbO₃:Fe; all-optical integrated photonics; current-voltage characteristics; integrated optics; laser molecular beam epitaxy; liquid phase epitaxy; lithium niobate p-n junctions; p-type lithium niobate crystals; rectifying characteristic; sputtering; thermoelectricity; Crystals; Iron; Lithium niobate; P-n junctions; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronics (SOPO), 2012 Symposium on

Conference_Location

Shanghai

ISSN

2156-8464

Print_ISBN

978-1-4577-0909-8

Type

conf

DOI

10.1109/SOPO.2012.6270514

Filename

6270514