DocumentCode :
2994222
Title :
Fabrication of Lithium Niobate p-n Junctions
Author :
Pei, Zidong ; Hu, Qian ; Kong, Yongfa ; Rupp, Romano ; Xu, Jingjun
Author_Institution :
MOE Key Lab. of Weak-Light Nonlinear Photonics, Nankai Univ., Tianjin, China
fYear :
2012
fDate :
21-23 May 2012
Firstpage :
1
Lastpage :
4
Abstract :
For lack of p-type lithium niobate crystals, the application of LiNbO3 is limited in active integrated optics. Here several p-type LiNbO3 crystals were investigated, and various LiNbO3 p-n junctions were fabricated by liquid phase epitaxy, sputtering and laser molecular beam epitaxy. The current-voltage characteristics of these junctions were measured. The experiment results show that thermo-electric oxidized 0.1 wt% Fe: LiNbO3 / 0.1 wt% Fe: LiNbO3 junction fabricated by sputtering has clear rectifying characteristic. These results are helpful for all-optical integrated photonics.
Keywords :
iron; liquid phase epitaxial growth; lithium compounds; molecular beam epitaxial growth; p-n junctions; rectification; semiconductor epitaxial layers; sputter deposition; thermoelectricity; LiNbO3:Fe-LiNbO3:Fe; all-optical integrated photonics; current-voltage characteristics; integrated optics; laser molecular beam epitaxy; liquid phase epitaxy; lithium niobate p-n junctions; p-type lithium niobate crystals; rectifying characteristic; sputtering; thermoelectricity; Crystals; Iron; Lithium niobate; P-n junctions; Sputtering; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location :
Shanghai
ISSN :
2156-8464
Print_ISBN :
978-1-4577-0909-8
Type :
conf
DOI :
10.1109/SOPO.2012.6270514
Filename :
6270514
Link To Document :
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