A TCAD Analysis of the Impact of Starting Material Doping on 1.8V CMOS Threshold and Body Effect

Author

Noorashiqin, A. M Hani ; Kordesch, Albert V. ; Muhamad, Muhamad Rasat

Author_Institution

Silterra Malaysia Sdn. Bhd., Kulim

fYear

2007

fDate

12-11 Dec. 2007

Firstpage

1

Lastpage

3

Abstract

This paper is focused on the body effect of a 1.8 V Complementary MOSFET (CMOS) device in a twin-well process. The effect of different starting material doping levels impact the body effect is investigated, which is important for both digital and analog design. MOSFET performance is determined not only by the threshold voltage, which determines when the device is ";on"; or ";off but also by the shift of threshold voltage, V_th with body bias. The channel doping profile, which is influenced, by substrate doping mainly determines threshold and body effect. These effects on the device behavior have been simulated using TSUPREM-4 for process characterization and MEDICI for electrical characterization.

Keywords

MOSFET; integrated circuit design; CMOS threshold; MEDICI; TCAD analysis; TSUPREM-4; body effect; complementary MOSFET device; starting material doping; substrate doping; twin-well process; voltage 1.8 V; Boron; CMOS process; Channel bank filters; Doping profiles; Logic devices; MOS devices; MOSFET circuits; Medical simulation; Research and development; Threshold voltage; Body effect; Gamma value; MEDICI; TSUPREM-4; starting material;

fLanguage

English

Publisher

ieee

Conference_Titel

Research and Development, 2007. SCOReD 2007. 5th Student Conference on

Conference_Location

Selangor, Malaysia

Print_ISBN

978-1-4244-1469-7

Electronic_ISBN

978-1-4244-1470-3

Type

conf

DOI

10.1109/SCORED.2007.4451415

Filename

4451415