Title :
Investigation on the Optical Properties of N-Doped Zn0.925Mg0.075O Thin Films
Author :
Wang, Weina ; Fang, Qingqing ; Liu, Yanmei ; Zhang, Hanming ; Zhang, Qiping
Author_Institution :
Sch. of Phys. & Mater. Sci., Anhui Univ., Hefei, China
Abstract :
Nitrogen doped Zn0.925Mg0.075O (ZMO) films were grown on Si substrate by pulsed laser deposition (PLD). The influence of nitrogen on the optical properties and the structure of ZMO films have been studied by photoluminescence (PL), Raman spectra and X-ray diffraction (XRD). The results indicate that the emission spectra separated obviously two light regions of an ultraviolet (UV) and a visible light with the increase of N2 pressure. For a low nitrogen sample (N:ZMO-5Pa), the result of a vibrational mode associated with Zni-NO complex has been obtained as combining PL with Raman spectra, indicating nitrogen substituting to oxygen and implanting into crystal site of ZnO.
Keywords :
II-VI semiconductors; Raman spectra; X-ray diffraction; ion implantation; nitrogen; photoluminescence; pulsed laser deposition; semiconductor doping; semiconductor growth; semiconductor thin films; ultraviolet spectra; vibrational modes; visible spectra; wide band gap semiconductors; zinc compounds; N-doped thin films; Raman spectra; Si; Si substrate; X-ray diffraction; XRD; Zn0.925Mg0.075O:N; crystal site implantation; emission spectra; optical properties; photoluminescence; pulsed laser deposition; ultraviolet-visible light spectra; vibrational mode; Educational institutions; Nitrogen; Optical films; Physics; Temperature measurement; Zinc oxide;
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-0909-8
DOI :
10.1109/SOPO.2012.6270517
