Theoretical Analysis on a Silicon Waveguide Mid-IR Raman Laser

Author

He, Jianli ; Zhang, Xingyu ; Wang, Qingpu ; Chen, Xiaohan ; Cong, Zhenhua ; Liu, Zhaojun ; Fan, Shuzhen ; Xu, Huihua ; Wang, Cong

Author_Institution

Shandong Provincial Key Lab. of Laser Technol. & Applic., Shandong Univ., Jinan, China

fYear

2012

fDate

21-23 May 2012

Firstpage

1

Lastpage

4

Abstract

We numerically solve the transfer equations of the extracavity silicon Raman laser to show that a silicon waveguide Mid-IR Raman laser is possible with a pumping power on the order of a few Watts. Considering the situation of the pumping wavelength at 2.94μm achievable using an Er:YAG laser and Raman laser wavelength at 3.47μm with the 521cm^-1 Raman shift, the output characteristics of the silicon waveguide Mid-IR Raman laser with different conditions are calculated and discussed.

Keywords

Raman lasers; elemental semiconductors; laser beams; laser cavity resonators; optical pumping; semiconductor lasers; silicon; spectral line shift; waveguide lasers; Er:YAG laser; Raman laser wavelength; Raman shift; Si; extracavity silicon Raman laser; output characteristics; pumping power; pumping wavelength; silicon waveguide mid-IR Raman laser; theoretical analysis; transfer equations; wavelength 2.94 mum; wavelength 3.74 mum; Laser excitation; Optical waveguides; Pump lasers; Ring lasers; Silicon; Stimulated emission; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronics (SOPO), 2012 Symposium on

Conference_Location

Shanghai

ISSN

2156-8464

Print_ISBN

978-1-4577-0909-8

Type

conf

DOI

10.1109/SOPO.2012.6270520

Filename

6270520